RF7115 Datasheet, PDF (3/22 Pages) RF Micro Devices – QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE

RF7115
Parameter
GSM850 Mode
Operating Frequency Range
Maximum Output Power
Total Efficiency
Input Power Range
Output Noise Power
Forward Isolation 1
Specification
Min.
Typ.
Max.
824
849
33.0
34.0
32.8
31.0
37
42
2
4
6
-88
-83
<-100
-87
-50
-41
Forward Isolation 2
-29
-15
All Harmonics up to 12.75GHz
-40
-35
All Non-Harmonic Spurious
-36
Input VSWR
2.5:1
Output Load VSWR Stability
10:1
Output Load VSWR Ruggedness 20:1
Input and Output Impedance
50
Note: V_{RAMP MAX}=3/8*V_BATT+0.15<1.5V
Unit
Condition
MHz
dBm
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Temp=+25°C, V_BATT=3.5V,
V_{RAMP MAX}, P_IN=4dBm,
25% Duty Cycle, Pulse Width=1154μs
25% duty cycle, pulse width 1154us
50% duty cycle, pulse width 2308us
Temp=+85°C, V_BATT=3.0V,
V_RAMP= V_{RAMP MAX} @ V_BATT=3.0V
At P_{OUT MAX}, V_BATT=3.5V
Full output power guaranteed at minimum
drive level
869MHz to 894MHz, RBW=100kHz,
P_OUT > +5 dBm
1930MHz to 1990MHz, RBW=100kHz,
P_OUT > +5 dBm
TXEnable=Low, P_IN=+6dBm,
V_RAMP = 0.25 V,
B1=B2=Low, B3=High
TXEnable=High, P_IN=+6dBm,
V_RAMP = 0.25 V,
B1=B2=Low, B3=High
Over all power levels (5dBm to 33dBm)
Over all power levels (5dBm to 33dBm)
Over all power levels (5dBm to 33dBm)
Spurious<-36dBm, set V_RAMP where
P_OUT<33.0dBm into 50Ω load
Set V_RAMP where P_OUT<33.0dBm into 50Ω
load. No damage or permanent degradation
to part.
Rev A0 060808
11-367