RF5601 Datasheet, PDF (3/9 Pages) RF Micro Devices – 4.9GHz to 5.85GHz Low Noise Amplifier with Bypass

RF5601
Parameter
Specification
Unit
Min Typ Max
Condition
Typical Conditions
(continued)
Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high
gain mode, BYP_EN = 0V in Bypass mode,
Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted
RF Port Impedance
LNA Turn On/Off Time
50
Ω Input and output. No external matching
100 160 nSec
ESD
Human Body Model 500
V EIA/JESD22-114A RF pins
500
V EIA/JESD22-114A DC pins
Charge Device Model 350
V JESD22-C101C all pins
Control Logic Table
Mode
High Gain
Bypass Mode
Undefined*
High In/Out Isolation
*This state is not recommended
VDD
High
High
High
High
Controls
LNA_EN
High
Low
High
Low
BYP_EN
High
Low
Low
High
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131029
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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