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SBB-3089Z Datasheet, PDF (2/6 Pages) RF Micro Devices – 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
SBB-3089Z
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
100
mA
Max Device Voltage (VD)
6
V
Max RF Input Power* (See Note)
+20
dBm
Max Junction Temperature (TJ)
+150
°C
Operating Temperature Range (TL)
-40 to +85
°C
Max Storage Temperature
+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50Ω
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)
Parameter
Unit 100 500
MHz MHz
850
MHz
1950 2140 2400
MHz MHz MHz
Small Signal Gain
dB
16.9
16.6
16.6
16.4
16.4
16.3
Output Third Order Intercept Point
dBm 29.5
30.5
30.0
29.5
29.0
29.5
Output Power at 1dB Compression
dBm 15.6
16.0
15.6
15.2
15.0
15.4
Input Return Loss
dB
24.0
26.5
24.5
21.0
20.5
20.0
Output Return Loss
dB
21.5
26.0
26.0
25.5
25.5
27.5
Reverse Isolation
dB
19.5
19.0
19.5
19.5
19.5
19.5
Noise Figure
dB
3.7
3.9
3.9
3.9
3.9
4.0
Test Conditions: VD=4.2V ID=42mA OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm RDC=20Ω TL=25°C ZS=ZL=50Ω
Typical Performance with Bias Tees, VD=5V with RDC=20Ω, ID=42mA
OIP3 versus Frequency,
(-5dBm/tone, 1MHz spacing)
34.0
P1dB versus Frequency
20.0
3500
MHz
16.1
27.0
15.2
15.5
21.0
19.5
3.8
32.0
18.0
30.0
16.0
28.0
26.0
25°C
-40°C
85°C
24.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
14.0
12.0
25°C
-40°C
85°C
10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
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EDS-105803 Rev C