SBB-3089Z Datasheet, PDF (1/6 Pages) RF Micro Devices – 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK

Preliminary ^SBB-3089Z
50MHz to
6000 MHz
InGaP HBT
Active Bias
Gain Block
SBB-3089Z
50MHz to 6000MHz InGaP HBT ACTIVE BIAS
GAIN BLOCK
RoHS Compliant and Pb-Free Product
Package: SOT-89
Product Description
RFMD’s SBB-3089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. The SBB-3089Z product is designed for high linearity 5V gain
block applications that require excellent gain flatness, small size, and min-
imal external components. It is internally matched to 50Ω.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss
30.0
V_S = 5V, I_S = 42mA
20.0
10.0
S21
Bias Tee Data, ZS = ZL = 50
, TL = 25°C
0.0
-10.0
S11
-20.0
S22
-30.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Features
Single Fixed 5V Supply
Patented Self Bias Circuit and
Thermal Design
Gain=16.4dBm at 1950MHz
P_1dB=15.2dBm at 1950MHz
OIP₃=29.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
MSL 1 Moisture Rating
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Wideband Instrumentation
Parameter
Specification
Min.
Typ.
Max.
Small Signal Gain
16.6
16.4
16.3
Output Power at 1dB Compression
15.6
15.2
15.4
Output Third Order Intercept Point
30.0
29.5
29.5
Input Return Loss
21.0
Output Return Loss
25.5
Noise Figure
3.9
Device Operating Voltage
4.2
4.3
Device Operating Current
42.0
Operational Current Range
30
46
Thermal Resistance
80
Test Conditions: V_D=4.2V I_D=42mA T_L=25°C OIP₃ Tone Spacing=1MHz
R_DC=20Ω Bias Tee Data Z_S=Z_L=50Ω P_OUT per tone=-5dBm
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
V
mA
mA
°C/W
Condition
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
1950 MHz
1950 MHz
R_DC=20Ω, V_S=5.0V
R_DC=20Ω, V_S=5.0V
Per user preference via R_DC
Junction to lead
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-105803 Rev C
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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