RFSW2100D Datasheet, PDF (2/11 Pages) RF Micro Devices – 55W GaN-on-SiC Reflective SPDT RF Switch

RFSW2100D
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Max Control Bias
-60
V
CW RF Input Power
69
W
Storage Temperature Range
Operating Temperature (Case)
Operating Junction Temperature (TJ)
Human Body Model (based on packaged device)
-55 to +125
°C
-40 to +85
°C
250
°C
Class 1A
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
MTTF @ -40V OFF Control Bias (95% Confidence Limits)*
(TJ < 200°C)**
(TJ < 250°C)**
Thermal Resistance, Rth (junction to case)***
(Expected value at TC = 85°C)
DC
3.0 x 10⁸
1.0 x 10⁷
10.5
Hours
Hours
°C/W
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
*MTTF - median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT(random) failure
rate.
**User will need to define this specification in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and
TC = TCASE to maintain maximum operating junction temperature and MTTF.
***The thermal resistance quoted here (10.5C/W) is the thermal resistance of the GaN-on-SiC die itself, not including the contribution of any particular
attach method. Rth is defined as (TJ – TC) / Power, where TC is measured at the bottom of the SiC.
Nominal Operating Parameters
Parameter
Specification
Min Typ Max
Recommended Operating Conditions
OFF Control Bias
-20 -40
ON Control Bias
0
RF I/O Impedance
50
Functional Test
RFC-RF1 Insertion Loss
-0.25
RFC-RF2 Insertion Loss
-0.25
RFC-RF1 Isolation
-60
RFC-RF2 Isolation
-60
RFC-RF1 2^nd Harmonic
-20
RFC-RF2 2^nd Harmonic
-20
RFC-RF1 3^rd Harmonic
-10
RFC-RF2 3^rd Harmonic
-10
RFC-RF1 - VC1 Current
250
RFC-RF2 - VC1 Current
-600
RFC-RF1 - VC2 Current
250
RFC-RF2 - VC2 Current
-600
Unit
V
V
Ω
dB
dB
dB
dB
dBm
dBm
dBm
dBm
µA
µA
µA
µA
Condition
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V
Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 3 0dBm VC1 = -10V VC2 = 0V
Frequency = 880MHz PIN = 30dBm VC1 = 0V VC2 = -10V
Frequency = 880MHz PIN = 30dBm VC1 = -10V VC2 = 0V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131029
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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