RFSW2100D Datasheet, PDF (1/11 Pages) RF Micro Devices – 55W GaN-on-SiC Reflective SPDT RF Switch

RFSW2100D
55W GaN-on-SiC Reflective SPDT RF Switch
RFSW2100D
The RFSW2100D is a GaN-on-SiC high power discrete RF switch
designed for military and commercial wireless infrastructure,
industrial/scientific/medical and general purpose broadband RF
control and switching applications. Using an advanced high power
density gallium nitride (GaN) semiconductor process, the
RFSW2100D is able to achieve low insertion loss and high
isolation with better than 10dB return loss across a wide band
from 30MHz to 6GHz with proper die attach and heat sinking. The
RFSW2100D is an SPDT RF switch suitable for many applications
with 55W CW input power compression capability under controlled
conditions, VSWR (3:1) and 25°C T_CASE, hot switching capable, as
well as 0.34dB insertion loss, and 37dB small signal isolation at
2GHz.
Package: Bare Die 1mm x 0.8mm
Features
■ Broadband Operation 30MHz to
6GHz
■ Advanced GaN HEMT Technology
■ 2GHz Typical Performance
 Insertion Loss: 0.34dB
 Isolation: 37dB
 P_0.1dB of 55W at -40V V_LOW
■ Small Form Factor
 1 x 0.8mm
■ High Power Capability
 P_0.1dB of 55W
■ Designed to Present 50Ω I/O
■ Hot Switching Capable
Functional Block Diagram
Ordering Information
RFSW2100D
55W GaN on SiC RF Switch
Applications
■ Military Communicaiton
■ Electronic Warfare
■ Commercial Wireless Infrastructure
■ Cellular and WiMAX Infrastructure
■ Civilian and Military Radar
■ General Purpose Broadband
Amplifiers
■ Public Mobile Radios
■ Industrial, Scientific, and Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131029
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 11