RFPA2005 Datasheet, PDF (2/9 Pages) RF Micro Devices – Integrated Power Amplifier Module 1805MHz to 2170MHz

Absolute Maximum Ratings
Parameter
DC Supply Voltage, VCC1, VCC2 (POUT <24dBm, VSWR < 5:1)
Enable Control Logic, VEN
CW Maximum RF Input Power into 50Ω Load (VCC =3.3V)
Storage Temperature Range
Moisture Sensitivity Level (260° JEDEC J-STD-020)
Modulated (WCDMA) Input Power 6:1 Output VSWR (VCC =3.3V)
ESD Rating, All Pins, HBM, JESD22-A114
ESD Rating, All Pins, CDM, JESD22-C101
Rating
4.5
+2.2
+15
-40 to +150
MSL3
+10
2000
1000
Unit
VDC
VDC
dBm
°C
dBm
V
V
Recommended Operating Condition
Parameter
Operating Temperature Range
Operating Junction Temperature
Power Supply VCC1, VCC2,
Power Supply Vbias
Specification
Min
Typ
Max
-40
+85
165
3.15
3.3
3.45
3.3
3.3
3.45
Unit
°C
°C
V
V
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Condition
Operating Frequency Range
General Performance
VEN Range (Logic Low)
VEN Range (Logic High)
VEN Enable Current
Total Idle Current (ICQ)
VBIAS Current
DC Enable Time
RF Rise / Fall Time
Electrical Performance:
Band 4
Gain
1805
2170 MHz
0
0.4
1.4
1.9
0.2
135
5
9
7
2
25
26.5
V
V
mA V_EN = 1.8V
mA _{DC only, VCC1 = VCC2 = 3.3V, VBIAS = 3.3V, VEN = 1.8V}
mA _{DC only, VEN = 1.8V}
µs _{DC only, time from VEN = high to stable idle current (90% of steady state}
value)
µs _{POUT ≤ 24dBm, 90% of target, DC settled prior to RF}
Unless otherwise specified; Temp = +25°C, V_CC1, V_CC2 = +3.3V,
V_Bias=+3.3V, V_EN = +1.8V, P_OUT = 24dBm, 2110MHz < F <
2170MHz, 50Ω system, 20MHz LTE DL with CFR 8dB
dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS141031
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
2 of 9