RFPA0133_12 Datasheet, PDF (2/9 Pages) RF Micro Devices – 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER

RFPA0133
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.25
V_DC
Power Down Voltage (V_PD)
-0.5 to +3.3
V
V_BIAS
-0.5 to +3.3
V
DC Supply Current
500
mA
Input RF Power
+10
dBm
Output Load VSWR (See Note)
6:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Note: Due to high efficiency of this PA, the maximum ICC should always be
less than 400mA. Only under short term poor VSWR conditions is 500mA
acceptable.
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
CW Output Power
CW Output Power
Small Signal Gain
Second Harmonic
Third Harmonic
CW Efficiency
Power Down “ON”
Power Down “OFF”
VPD Input Current
G16, G8 “ON”
G16, G8 “OFF”
G16, G8 Input Current
Output Power
Turn On/Off Time
Power Supply
Power Supply Voltage
Power Supply Current
Idle Current
Specification
Min.
Typ.
Max.
27.5
30
32
23
45
55
63
3.0
0
0.5
0.8
6
1.7
3.0
0
0.7
1.0
26.5
27.5
29
21
23
25
14
16
18
3
5
8
200
3.6
230
150
65
35
40
75
110
60
200
Unit
dBm
dBm
dB
dBc
dBc
%
V
V
mA
V
V
mA
dBm
dBm
dBm
dBm
ns
Condition
T=25 °C, V_CC=3.6V, V_PD=V_BIAS=3.0V,
P_IN=0dBm, Freq=915MHz
V_CC = 3.6 V
V_CC = 5 V
P_IN = -10 dBm
Without external second harmonic trap
G16=“high”, G8=“high”, P_IN=0dBm
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
G16=“high”, G8=“high”, P_IN=0dBm
G16=“high”, G8=“low”, P_IN=0dBm
G16=“low”, G8=“high”, P_IN=0dBm
G16=“low”, G8=“low”, P_IN=0dBm
V
Specifications
mA
G16=“high”, G8=“high”, P_IN=0dBm
mA
G16=“high”, G8=“low”, P_IN=0dBm
mA
G16=“low”, G8=“high”, P_IN=0dBm
mA
G16=“low”, G8=“low”, P_IN=0dBm
mA
G16=“high”, G8=“high”, No RF In
nA
G16=“low”, G8=“low”, PD=“low”. No RF IN.
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