RFDA0045 Datasheet, PDF (2/10 Pages) RF Micro Devices – DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ

RFDA0045
Absolute Maximum Ratings
Parameter
DC Supply Voltage
DS Supply Current
Power Dissipation
Maximum Input RF Power
Operating Temperature (T_CASE)
Storage Temperature
Junction Temperature
ESD Rating (HBM)
Moisture Sensitivity Level
Rating
+5.5
230
1265
16
-40 to +85
-40 to +150
150
500 (Class 1B)
MSL 3
Unit
V
mA
mW
dBm
°C
°C
°C
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Specification
Unit
Min. Typ. Max.
Condition
Frequency
Gain - 150MHz (Max Gain State)
Gain - 500MHz (Max Gain State)
Gain - 850MHz (Max Gain State)
Gain Control Range
Step Accuracy
Output P1dB
Output IP3 - 150MHz
Output IP3 - 500MHz
Output IP3 - 850MHz
Noise Figure
Input Return Loss
Output Return Loss
Settling Time
Control Interface
Impedance
Supply Voltage
Total Supply Current
Thermal Resistance
10
850
44.5
43.0
41.5
31.5
+/- (0.15+5% attenuation setting)
19.5
42
38
35
2.4
14.5
20
6
50
4.75
5.0
5.25
155
170
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dB
dB
ns
bit

V
mA
°C/W
Attenuation=0dB, 150MHz
Attenuation=0dB, 500MHz
Attenuation=0dB, 850MHz
Major States, up to 850MHz
Attenuation = 0dB, 50MHz to 850MHz
P_OUT=0dBm/tone, 1MHz Spacing, 150MHz
P_OUT=0dBm/tone, 1MHz Spacing, 500MHz
P_OUT=0dBm/tone, 1MHz Spacing, 850MHz
Attenuation = 0dB
10MHz to 500MHz, Slight Degradation Elsewhere
10MHz to 500MHz, Slight Degradation Elsewhere
t_RISE, t_FALL (10%/90% RF)
SPI Interface
Recommended Operating Voltage
Sum of V_DD, V_CC_AMP1, V_CC_AMP2(RF_OUT)
Notes:
1. V_DD = 5V, Logic Voltage = 5V, T = 25°C.
2. Broadband Application Circuit.
Typical RF Performance at Key Operating Frequencies
Parameter
Unit
50MHz 150MHz
500 MHz
850 MHz
Max Small Signal Gain
Output P1dB
Output IP3 ¹
Input Return Loss
Output Return Loss
Noise Figure ²
dB
44.4
44
42.6
41
dBm
19.7
20
20
20
dBm
41
42
40
36
dB
17.5
18
13.6
10.6
dB
27
23
32
12.2
dB
2.3
2.3
2.4
2.4
Notes:
1. P_OUT = 0 dBm/tone, 1 MHz Spacing.
2. Attenuation = 0dB
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DS110621