D10040200PH1 Datasheet, PDF (2/3 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz

D10040200PH1
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
Power Gain
Slope^[1]
18.5 19.0 19.5
20.0 20.5 21.5
1.0 1.5 2.5
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
dB f = 45MHz
dB f = 1000MHz
dB f = 45MHz to 1000MHz
Flatness of Frequency Response
0.8 dB f = 45MHz to 1000MHz (Peak to Valley)
20
dB f = 45MHz to 320MHz
Input Return Loss
19
dB f = 320MHz to 640MHz
18
dB f = 640MHz to 870MHz
16
dB f = 870MHz to 1000MHz
20
dB f = 45MHz to 320MHz
Output Return Loss
19
dB f = 320MHz to 640MHz
18
dB f = 640MHz to 870MHz
17
dB f = 870MHz to 1000MHz
Noise Figure
3.0 4.0 dB f = 50MHz to 1000MHz
Total Current Consumption (DC)
430.0 450.0 mA
Distortion Data 40MHz to 550MHz
CTB
-77 -74 dBc
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω
XMOD
CSO
-71
-68 dBc _{79 ch 7 dB tilted; V0 = 50dBmV at 550MHz, plus 75 digital channels}
-71
-68
dBc ^{(-6dB offset)[2]}
CIN
65 68
dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the
carrier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for Carrier to Noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131211
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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