D10040200PH1 Datasheet, PDF (1/3 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid 45MHz to 1000MHz

D10040200PH1
GaAs/GaN Power Doubler Hybrid
45MHz to 1000MHz
The D10040200PH1 is a Hybrid Power Doubler amplifier
module. The part employs GaAs pHEMT and GaN HEMT die
and is operated from 45MHz to 1000MHz. It provides high
output capability, excellent linearity, and superior return loss
performance with low noise and optimal reliability.
D10040200PH1
Package: SOT-115J
Features
■ Low Current
■ Excellent Linearity
■ Superior Return Loss Performance
■ Extremely Low Distortion
■ Optimal Reliability
■ Extremely Low Noise
■ Unconditionally Stable Under All
Terminations
■ High Output Capacity
■ 20.0dB Min. Gain at 1GHz
■ 450mA Max. at 24VDC
Ordering Information
D10040200PH1
Box with 50 pieces
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Applications
■ 45MHz to 1000MHz CATV
Amplifier Systems
Rating
65
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not impli
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131211
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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