CGR-0218Z Datasheet, PDF (2/8 Pages) RF Micro Devices – PUSH-PULL 5MHz to 210MHz HIGH LINEARITY InGaP HBT AMPLIFIER

CGR-0218Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (I_D)
Max Device Voltage (V_D)
Max RF Input Power
300
mA
6.0
V
18
dBm
Max Junction Temp (T_J)
Operating Temp Range (T_L)
Max Storage Temp
150
°C
-40 to +85
°C
150
°C
Min Storage Temp
-40
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D<(T_J-T_L)/R_TH, j-l and T_L=T_LEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
30
25
20
dB
15
10
5
0
0
20
16
12
dB
8
4
0
0
Input Return Loss
50
100
150
200
250
Frequency
Gain
50
100
150
200
250
Frequency
35
30
25
20
dB
15
10
5
0
0
25
20
15
dB
10
5
0
0
Output Return Loss
50
100
150
200
250
Frequency
Reverse Isolation
50
100
150
200
250
Frequency
2 of 8
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