SGA6586Z Datasheet, PDF (1/6 Pages) RF Micro Devices – DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER

SGA6586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6586Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA6586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F_T and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
 ^{SiGe HBT}
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @T_L=+25°C
32
0
GAIN
24
-10
IRL
16 ^ORL
-20
8
-30
0
-40
0
1
2
3
4
5
Frequency (GHz)
Features
 High Gain: 18.4dB at
1950 MHz
 Cascadable 50Ω
 Operates from Single Supply
 Low Thermal Resistance
Package
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 IF Amplifier
 Wireless Data, Satellite
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
23.8
dB
850 MHz
18.4
dB
1950 MHz
16.7
dB
2400 MHz
Output Power at 1dB Compression
21.5
dBm
850 MHz
19.0
dBm
1950 MHz
Output Third Intercept Point
33.8
dBm
850 MHz
32.2
dBm
1950 MHz
Bandwidth Determined by Return
Loss
2500
MHz
>10 dB
Input Return Loss
21.4
dB
1950 MHz
Output Return Loss
18.0
dB
1950 MHz
Noise Figure
3.1
dB
1950 MHz
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance
(Junction - Lead)
97
°C/W
Test Conditions: V_S=8V, I_D=80mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=-5dBm, R_BIAS=39Ω, T_L=25°C, Z_S=Z_L=50Ω
DS100916
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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