SBB4089Z Datasheet, PDF (1/8 Pages) RF Micro Devices – 50MHz to 6000MHz CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

SBB4089Z
50 MHz to
6000 MHz
Cascadable
Active Bias
InGaP HBT
MMIC Ampli-
fier
SBB4089Z
50MHz to 6000MHz CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB4089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB4089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB4089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50s.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 ^{InGaP HBT}
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss versus Frequency
(w/ BiasTees)
20
S21
10
0
-10
S22
-20
-30
S11
-40
0
1
2
3
4
Frequency (GHz)
25°C
25°C
25°C
5
6
Features
 OIP₃=35.2dBm at 1950MHz
 P_1dB=19.3dBm at 1950MHz
 Single Fixed 5V Supply
 Robust 1000V ESD, Class 1C
 Patented Thermal Design &
Bias Circuit
 Low Thermal Resistance
Applications
 PA Driver Amplifier
 Cellular, PCS, GSM, UMTS
 Wideband Instrumentation
 Wireless Data, Satellite Termi-
nals
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
14.0
15.5
17.0
dB
850 MHz
13.8
15.0
17.0
dB
1950 MHz
13.5
15.5
17.5
dB
2000 MHz
Output Power at 1dB Compression
19.0
dBm
850 MHz
18.0
19.2
dBm
1950 MHz
Output Third Order Intercept Point
39.0
dBm
850 MHz
33.0
35.3
dBm
1950 MHz
Return Loss
4500
MHz
Minimum 10dB
Input Return Loss
10.0
16.3
dB
1950 MHz
Output Return Loss
10.0
18.0
dB
1950 MHz
Reverse Isolation
18.5
dB
1950 MHz
Noise Figure
4.3
5.5
dB
1950 MHz
Operating Temp Range (T_L)
-40
+105
°C
Device Operating Voltage
5.0
5.25
V
Device Operating Current
70.0
80.0
92.0
mA
Thermal Resistance
69.9
°C/W
junction - lead
Test Conditions: V_D=5V I_D=80mA Typ. OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm T_L=25°C, Z_S=Z_L=50, Tested with Bias Tees
DS150622
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