RFMD2080 Datasheet, PDF (1/19 Pages) RF Micro Devices – 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

RFMD2080
RFMD2080
45MHz TO 2700MHz IQ MODULATOR WITH
SYNTHESIZER/VCO AND BASEBAND INTERFACE
Package: QFN, 32-Pin, 5mm x 5mm
Features
 RF Output Frequency Range
45MHz to 2700MHz
 Fractional-N Synthesizer with
Very Low Spurious Levels
 Typical Step Size 1.5Hz
 Fully Integrated Wideband VCOs
and LO Buffers
 Integrated Phase Noise
<0.2° rms at 1GHz
 Integrated Baseband
Amplification Stage with Variable
Gain and Filtering
 Tunable Baseband Filters Input
3dB Bandwidth from 1.5MHz to
10MHz
 -45dBc Unadjusted Carrier
Suppression
 -40dBc Unadjusted Sideband
Suppression
 Very Low Noise Floor
-150dBm/Hz Typical
 Output P1dB +4dBm
 Output IP3 +18dBm
 3.0V to 3.3V Power Supply
 155mA Typical Current
Consumption
 Serial Programming Interface
Applications
 Satellite Communications
 QPSK/QAM Modulators
 SSB Modulators
 Software Defined Radios
Phase
det .
Synth
Ref.
divider
Functional Block Diagram
Product Description
The RFMD2080 is a low power, highly integrated, IQ modulator with integrated fractional-N syn-
thesizer and voltage controlled oscillator (VCO). The RFMD2080 can generate output frequen-
cies of between 45MHz and 2700MHz, making it suitable for a wide range of applications.
The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that
delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO combined with an
external loop filter allows the user to generate an oscillator signal covering 90MHz to 5400MHz.
The signal is buffered and routed to a high accuracy quadrature divider (/2) that drives the bal-
anced I and Q mixers. The output of the mixers are summed and applied to a differential RF out-
put stage. The device also features a differential input for an external VCO or LO source.
The baseband I and Q stages are highly integrated; featuring variable gain and filtering as well
as generation of DC offset voltages. The programmable DC offsets enable improved carrier sup-
pression. The baseband input 3dB bandwidth can be tuned from 1.5MHz to 10MHz, and the
total gain control range is 38dB with 2dB resolution.
Device programming is achieved via a simple 3-wire serial interface. In addition, a unique pro-
gramming mode allows up to four devices to be controlled from a common serial bus. This elim-
inates the need for separate chip-select control lines between each device and the host
controller. Up to six general purpose outputs are provided, which can be used to access internal
signals (the LOCK signal, for example) or to control front end components. The device is opti-
mized for low power operation, consuming typically only 155mA from a 3V supply.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
DS140110
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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