RFHA1101D Datasheet, PDF (1/8 Pages) RF Micro Devices – Advanced GaN HEMT Technology

RFHA1101D
4.3W GaN on SiC Power Amplifier Die
The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete
amplifier die designed for commercial wireless infrastructure,
cellular and WiMAX infrastructure, industrial/scientific/medical,
and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN)
semiconductor process, the RFHA1101D is able to achieve high
efficiency and flat gain over a broad frequency range in a single
amplifier design with proper heat sinking and assembly. The
RFHA1101D is an unmatched 0.5µm gate, GaN transistor die
suitable for many applications with > 36dBm 3dB-compressed
power, > 60% 3dB-compressed drain efficiency, and > 21dB small
signal gain at 2GHz.
RFHA1101D
Package: Die
Features
■ Broadband Operation DC to
10GHz¹
■ Advanced GaN HEMT Technology
■ Small Signal Gain = 21.4dB at
2.14GHz
■ 28V Typical Performance
 Output Power 4.3W at P3dB
 Drain Efficiency 60% at P3dB
■ Dimensions
 GaN Die:
0.448mm x 0.825mm x
0.1mm
 GaN Die on Heat Sink:
1.25mm x 1.25mm x 0.3mm
■ Active Area Periphery: 2.22mm
Functional Block Diagram
Ordering Information
RFHA1101D
4.3W GaN on SiC Power Amplifier Die
Applications
■ Commercial Wireless Infrastructure
■ Cellular and WiMAX Infrastructure
■ Civilian and Military Radar
■ General Purpose Broadband
Amplifiers
■ Public Mobile Radios
■ Industrial, Scientific, and Medical
[1] Based on 10dB power gain extrapolated from fMAX
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131025
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