RFCM3080 Datasheet, PDF (1/6 Pages) RF Micro Devices – 40-1003MHZ GAAS/GAN PUSH PULL MODULE

RFCM3080
Features
 Excellent Linearity
 Superior Return Loss Performance
 Extremely Low Distortion
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 27.5dB Min. Gain at 1003MHz
 270mA Max. at 24VDC
Applications
 40MHz to 1003MHz CATV Amplifier
Systems
RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm
Functional Block Diagram
Product Description
The RFCM3080 is a Push Pull amplifier SMD module. The part employs GaAs MESFET, GaAs
pHemt and GaN Hemt die and is operated from 40MHz to 1003MHz. It provides excellent
linearity and superior return loss performance with low noise and optimal reliability. DC
current of the device can be externally adjusted for optimum distortion performance vs.
power consumption over a wide range of output level.
DC current of the device can be externally adjusted for optimum distortion performance
versus power consumption over a wide range of output level.
Ordering Information
RFCM3080SB
RFCM3080SQ
RFCM3080SR
RFCM3080TR7
RFCM3080TR13
RFCM3080PCBA-410
RFCM3080PCK-410
Sample Bag 5 pieces
Sample Bag 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with Sample Pack
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
Si BiCMOS
Si CMOS
SiGe HBT
Si BJT
GaN HEMT
RF MEMS
LDMOS
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