RF5163_1 Datasheet, PDF (1/14 Pages) RF Micro Devices – 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

RF5163
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package: QFN, 16-Pin, 4x4
Features
„ Single 3.3V or 5V Power Sup-
ply
„ +33dBm Saturated Output
Power (typ.)
„ 20dB Large Signal Gain (typ.)
„ 2.0% EVM @ +26dBm,
54Mbps (typ.)
„ Separate Power
Detect/Power Down Pins
„ 1800MHz to 2500MHz Fre-
quency Range
Applications
„ 802.11b/g/n Access Points
„ PCS Communication Systems
„ 2.4GHz ISM Band Applica-
tions
„ Commercial and Consumer
Systems
„ Portable Battery-Powered
Equipment
„ Broadband Spread-Spectrum
Systems
16 15 14 13
RF IN 1
12 RF OUT
VREG1GND 2
11 RF OUT
P DOWN 3
P DETECT 4
Bias
10 RF OUT
9 GND
5678
Functional Block Diagram
Product Description
The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specif-
ically for low voltage operation. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 802.11b/g/n access point transmit-
ters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a
backside ground. The RF5163 is designed to maintain linearity over a wide range of
supply voltage and power output.
Ordering Information
RF5163
RF5163L
RF5163PCBA-41X
RF5163PCBA-WD
3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn (Pb-free) Fin-
ish
3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board, With Driver
Optimum Technology Matching® Applied
9GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A12 DS061114
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