CGA-1518Z_12 Datasheet, PDF (1/8 Pages) RF Micro Devices – HIGH LINEARITY InGaP HBT AMPLIFIER

CGA-1518Z
Push-Pull
50MHz to
1000 MHz
High Linearity
InGaP HBT
Amplifier
NOT FOR NEW DESIGNS
CGA-1518Z
PUSH-PULL 50MHz to 1000MHz HIGH
LINEARITY InGaP HBT AMPLIFIER
Package: SOIC-8
Product Description
Features
RFMD’s CGA-1518Z is a high performance InGaP HBT MMIC Amplifier. Designed _{ 5 V Single Supply}
with InGaP process technology for excellent reliability. A Darlington configuration is
utilized for broadband performance. The heterojunction increases breakdown volt-
 Excellent Linearity Perfor-
mance at +34dBmV Output
age and minimizes leakage current between junctions. The CGA-1518Z contains
two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent
second order performance. The second and third order non-linearities are greatly
S _{improved in the push-pull configuration.}
N _{Optimum Technology}
Matching® Applied
IG ^{GaAs HBT}
GaAs MESFET
S  InGaP HBT
SiGe BiCMOS
E _{Si BiCMOS}
D ^{SiGe HBT}
Amplifier Configuration
1
8
2
7
Power Per Tone
 Two Amplifiers in Each SOIC-8
Package Simplify Push-Pull
Configuration PC Board Lay-
out
 Available in Lead-Free, RoHS
Compliant, and Green Pack-
aging
 SOIC-8 Package
Applications
 CATV Head End Driver and
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
3
4
NEW
6
5
Predriver Amplifier
 CATV Line Driver Amplifier
Parameter
R _{Small Signal Gain}
O Gain Flatness
Output IP3
Specification
Min.
Typ.
14.9
15.5
±0.6
37
F _{Output Power at 1dB Gain Compres-}
20
sion
T _{Input Return Loss}
20
Output Return Loss
20
O _{Noise Figure}
4.5
Balun Insertion Loss Included
N CSO
77
Max.
Unit
dB
dB
dBm
dBm
dB
dB
dB
dBc
Condition
50MHz to 1000MHz
50Hz to 1000MHz
500 MHz
Tone Spacing=1MHz
P_OUT per Tone=+6dBm
500 MHz
500 MHz
500 MHz
50MHz to 1000MHz
79 Ch., Flat Tilt, +34dBmV
CTB
70
dBc
79 Ch., Flat Tilt, +34dBmV
XMOD
61
dBc
79 Ch., Flat Tilt, +34dBmV
Device Operating Voltage
5.0
V
Device Operating Current
150
mA
5V V_CC
Thermal Resistance
(Junction to Lead)
30
°C/W
Junction to case slug
Test Conditions: V_CC=5V, I_D=150mA Typ., T_L=25°C, Z_S=Z_L=75, Push Pull Application Circuit
DS121030
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mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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