TG2000-10 Datasheet, PDF (2/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
mm
TG2000-10
TYP
1
15 x 10 x 5.4
Absolute Maximum Ratings
PARAMETER
UNIT
Gate-Source Voltage
V
Drain-Source Voltage
V
Gate Current
mA
Operating Junction Temperature
°C
Operating Case Temperature
°C
Storage Temperature
°C
Operating Voltages
PARAMETER
Drain Voltage
Gate Voltage (on-state)
Gate Voltage (off-state)
UNIT
V
V
V
MIN
-
-
-
RATING
-10 ~ 0
50
3.6
225
-40 ~ 85
-40 ~ 100
TYP
+28
Vgs@Idq
-8
REMARK
-
Outermost
SYMBOL
Vgs
Vds
Ig
T_J
T_C
T_STG
MAX
-
-2
-
SYMBOL
Vds
Vgs
Vgs
Block Diagram
200MHz~2000MHz
Input
Input
Matching
Circuit
-Vgs
30MHz~2000MHz
Input
Input
Matching
Circuit
-Vgs
Output
Matching
Circuit
+Vds
Output
Output
Matching
Circuit
Output
1nF ^390Ω
1uF
+Vds
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
2/6
All specifications may change without notice
Version 0.6