TG2000-10 Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier
TG2000-10
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Weight
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
• TRS(Trunked Radio System)
• RF Sub-Systems
• Base Station
Package Type : NP-18
Description
TG2000-10 have a high performance from 100 to 2000MHz. It has developed for Radio and TRS applications. Because using GaN-
HEMT and AlN-board, it’s effective for thermal problems. This TG2000-10 is designed using Psat of 10W.
And adding 220nH of inductor to Drain Bias Network, this is used at the lower frequency of 20MHz.
Electrical Specifications @ V_ds=28V, Vgs@Idq, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
200
-
Power Gain @ P1dB
10
Gain Flatness
dB
-
12
±1.0
Input Return Loss
-5
-10
P1dB
P3dB
37
38
dBm
-
40
Efficiency @ P3dB
%
30
50
Ids @ P3dB
mA
-
550
Load Mismatch
-
-
5:1
-
Vgs@Idq
Supply Voltage
V
-
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
TG Series have internal DC blocking capacitors at the RF input and output ports
MAX
2000
-
-
-
-
-
-
-
-
-
-
CONDITION
ZS = ZL = 50 ohm
Vds = +28V
Vgs@Idq
Idq = 20mA
All load phase
Vgs
Vds
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.6