RWP06040-10_14 Datasheet, PDF (1/8 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier RWP06040-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 450 ~ 880MHz Operation Bandwidth
• Small Signal Gain 38dB min.
• 40W Typical. @ P3dB
Applications
• General Purpose
Package Type : DP-75
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 450 ~ 880MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ V_CC = 28V; Tc = 45°C; Z_S = Z_L = 50Ω
PARAMETER
UNIT MIN
TYP
Operating Frequency
MHz
450
-
Small Signal Gain
dB
38
40
Gain Variation vs Frequency
dBpp
-
±1
P₃dB
dBm
44
45
OIP3 @ Po = +33dBm
(1MHz Tone spacing, CW 2-Tone)
dBm
49
51
Input Return Loss
dB
-
-12
Output Return Loss
dB
-
-11
ACLR@Pout=28dBm
45
48
W-CDMA,64PCH,4FA
48
51
dBc
Spectrum Analyzer Setting :
44
45
RBW=30KHz, VBW=10KHz
47
48
Supply Voltage
V
27.5
28
Quiescent Current consumption
A
-
2.5
MAX
880
42
±2
-
-
-10
-7
-
-
-
-
30
2.7
On/Off Switching Time*
uS
-
3.0
5.0
Shut Down or Switch On/Off
0
-
0.5
TTL Voltage**
V
2.5
5
5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 300ms delay
CONDITION
-
-
-
450 ~ 880MHz
450 ~ 880 MHz
-
450MHz
-
△=5MHz
△=10MHz
880MHz
△=5MHz
△=10MHz
Vcc(=Vds)
-
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.8