RWP06040-10_1 Datasheet, PDF (1/7 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier RWP06040-10
Product Features
GaN on SiC Broadband High Power Amplifier
450 to 880MHz Operation Bandwidth
Small Signal Gain 38dB min
40W Typical. P3dB
Application
UHF Television
Package : DP-75
Description
The RWP06040-10 is designed for Wideband Power Amplifier application frequencies from 450 to 880MHz. This module uses
GaN HEMT technology which performs high breakdown voltage, high linearity, wide bandwidth and high efficiency.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Typical Specifications
No
Item
Conditions
1 Bandwidth
2 Small Signal Gain
3 Gain Variation vs Temperature
-20°C to 60°C
4 Gain Variation vs Frequency
5 P_3dB
OIP3 @ Po = +33dBm
6 _{(1MHz Tone spacing, CW 2-}
Tone)
7 Input Return Loss
450MHz to 880MHz
450MHz to 880MHz
8 Output Return Loss
ACLR@Pout=28dBm
9
W-CDMA,64PCH,4FA
Spectrum Analyzer Setting :
RBW=30KHz, VBW=10KHz
450MHz
880MHz
△=5MHz
△=10MHz
△=5MHz
△=10MHz
10 Supply voltage
Vcc(=Vds)
11 Quiescent Current consumption
12 On/Off Switch Time
Shut Down or Switch On/Off
13
TTL Voltage
On: TTL "Low"
Off: TTL "High"(300mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
V_CC = +28V; T = 25℃; Z_S = Z_L = 50Ω
Min
Typ
Max
Unit
450
880
MHz
38
40
42
dB
-2.0
+2.0
dB
±1
±2
dBpp
44
45
dBm
49
51
dBm
-12
-10
dB
-11
-7
dB
45
48
48
51
dBc
44
45
47
48
27.5
28
30
V
2.5
2.7
A
3.0
5.0
uS
0
0.5
V
2.5
5
5.5
▪ Tel : [phone]
▪ www.rfhic.com/contact
▪ All specifications may change without notice.
▪ Version 1.1