RWP03160-10 Datasheet, PDF (1/5 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier
RWP03160-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 500MHz Operation Bandwidth
• Small Signal Gain 41dB min.
• 160W Minimum . @ Psat
Applications
• General Purpose
Package Type : DP-100
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 20 ~ 500MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ V_CC = 28V; Tc = 45°C; Z_S = Z_L = 50Ω
PARAMETER
UNIT MIN
TYP
Operating Frequency
MHz
20
-
Small Signal Gain
dB
41
43
Gain Variation vs Frequency
dBpp
-
±1
P₃dB
dBm
50
52
OIP3 @ Po = +43dBm
(1MHz Tone spacing, CW 2-Tone)
dBm
50
54
Input Return Loss
dB
-
-11
N^th Harmonic suppression
dBc
15
25
MAX
500
45
±1.5
-
-
-7
-
Supply Voltage
V
27.5
28
30
Quiescent Current consumption
A
-
7
7.5
Current Consumption @ P₃dB
A
-
11
13
On/Off Switching Time*
uS
-
3
5
Shut Down or Switch On/Off
0
-
0.5
TTL Voltage**
V
2.5
5
5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 300ms delay
CONDITION
-
-
-
20 ~ 500MHz
20 ~ 500 MHz
-
CW 1-tone
@Po = P1dBm
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.7