RWP03040-10_17 Datasheet, PDF (1/6 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 520MHz Operation Bandwidth
• Small Signal Gain 40dB min.
• 40W Typical. @ P3dB
RWP03040-10
Applications
• General Purpose
Package Type : DP-75
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 20 ~ 520MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ V _CC = 28V; Tc = 45°C; Z _S = Z _L = 50Ω
PARAMETER
Operating Frequency
Small Signal Gain
Gain Variation vs Frequency
P ₃ dB
UNIT
MHz
dB
dBpp
dBm
MIN
20
40
-
45
46
TYP
-
42
±1
46
47
MAX
520
44
±1.5
-
-
OIP3 @ Po = +33dBm
(1MHz Tone spacing, CW 2-Tone)
dBm
50
54
-
Input Return Loss
dB
-
-11
-7
2^nd Harmonic suppression
dBc
-
-48
-40
Supply Voltage
V
27.5
28
30
Quiescent Current consumption
A
2.8
3
3.2
Current Consumption @ P ₃ dB
A
-
3.8
4.5
On/Off Switching Time*
uS
-
3
5
Shut Down or Switch On/Off
0
-
0.5
V
TTL Voltage**
2.5
5
5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
-
-
20 ~ 100MHz
100 ~ 520MHz
20 ~ 520 MHz
-
CW 1-tone
@Po = +30dBm, Freq 200MHz
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 2.1