RWM03060-10 Datasheet, PDF (1/8 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier RWM03060-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 520MHz Operation Bandwidth
• 80W typical P3dB
• 50% typical Power Efficiency at P3dB
• Fast En/Disable Switching
Applications
• General Purpose
• Communication system
Description
The power amplifier module is designed for general purpose.
Operating frequency range is from 20 ~ 520MHz.
Gallium Nitride on SiC Technology is used and attached on a copper sub carrier.
Improved thermal handling by patented technology.
The amplifier includes thermal overload & input power overdrive protection, external voltage variable attenuator port and current
monitor.
Electrical Specifications @ VDD=28VDC, T=25°C, 50Ω System
PARAMETER
UNIT
MIN
TYP
Operating Frequency Range
MHz
20
-
Output Power @P3dB, CW-Signal
Watt
-
80
Power Gain ( VVA = 0V or GND)
dB
-
55
Power Gain Flatness
dB
-
±2.0
Gain Adjustable Range
dB
25
-
Gain Variation
dB
-
-
Input Return Loss
dB
-
-10
Power Efficiency @ P3 dB
%
-
50
Switching Time (Enable =TTL Low)
usec
-
4
Spurious Signals
dBc
-
-70
Operating Voltage
Volt
27.5
28
Quiescent Current consumption
Amp
-
1.7
Current Consumption @ P3 dB, VDC=28V Amp
-
7.0
MAX
520
-
-
±2.5
-
±1.5
-7
-
5
-60
30
-
10.0
SYMBOL
BW
P_3dB
Gp
ΔGp
VVA
ΔG_TEMP
S11
%
T_sw
Spur
VDC
IDQ
IDD
Absolute Maximum Ratings
PARAMETER
UNIT
Input Power
dBm
Load VSWR
-
Note
When input power is over maximum rating, internal limiter will be operated for protection.
MAX
3
2.5 : 1
SYMBOL
P_in
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0