MO9Q_14 Datasheet, PDF (1/4 Pages) RFHIC – Integrated Monolithic GaAs MESFET

Active Down Mixer
MO9Q
Product Features
• Integrated Monolithic GaAs MESFET
• Active Mixer Packages Module
• Pb-free 3mm 16-pin QFN package
• Lower Manufacturing Cost
• Higher Productivity and Reliability
• Very Low Noise Figure & Low Distortion
Applications
• Repeater
• Base Station
Package Type: QFN-3
Description
The IC operates from a positive +5V rail consuming 145 mA of current while only requiring a 2 dBm LO drive.
The MCM is implemented with reliable and mature GaAs MESFET technology.
Electrical Specifications (Typical Performance at -30°C ~ 80°C)
RF
Frequency
(MHz)
836
1850
2140
3500
LO
Frequency
(MHz)
766
1780
2070
3430
IF
Frequency
(MHz)
70
Conversion
Gain
(dB)
11
10
6
0
OIP3
(dBm)
28
25
25
20
LO to IF
Leakage
(dBm)
-15
-20
-20
-20
IF to RF
Leakage
(dBm)
-20
-20
-20
-25
Vdd / Idd
(V / mA)
5 / 145
5 / 145
5 / 145
5 / 145
Application Circuit : Matched externally for broadband
RF Input
C1 100nF
R1
13K
Bias +5V
R4
0 Ohm
Balun
D31044
NC
RO
R2
620
C3 10nF
IF N
16
C9 opt.
NC IF
15 14
C7
10nF
R5
opt.
GND
13
IF Output
Bias +5V
C4 10pF
R3
240
C5
100pF
1 RF N
2 NC
3 RF
4 NC
5
CUR
6
7
8
GND GND
12 NC
11 NC
C10
100pF
10
9 NC
C11
opt.
LO Input
C6
L1
opt.
2.7uH
Bias +5V
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 8.2