HR5459-25B Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HR5459-25B
Product Features
• GaN on SiC HEMT
• Surface Mount Hybrid Type
• Compact Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radar Systems
• Pulse amplifier application
Package Type : NP-36
Description
The HR5459-25B is designed for Radar system application frequencies from 5.4GHz to 5.9GHz and GaN HEMT technology has been
used that performs high breakdown voltage, wide bandwidth and high efficiency. HR5459-25B has been designed 2 stages to have
higher Gain at the wide frequency range of 5.4GHz ~5.9GHz. GaN HEMT technology has been used to every amplifier in it for better
reliability. Since it is high efficiency amplifier, it can perform at max 10% duty cycle and 50us of pulse width.
Electrical Specifications @ Vds =50V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
5400
-
Power Gain
-
20
Power Flatness
dB
-
-
Input Return Loss
-
-8
Pout @ Psat
W
20
25
Harmonics 1 to N
dBc
-25
Pulse Droop
dB
0.5
Pulse
Fall Time
ns
Response
Rise Time
ns
Drain Efficiency
%
-
40
Ids
A
-
1.25
V
-3.5
-3.3
Supply Voltage
V
-
50
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Test condition = 50us (pulse width), 10%(duty cycle), Pin=25.5dBm
Note
HR Series have internal DC blocking capacitors at the RF input and output ports
MAX
5900
-
1
-
-
200
200
-
-2.7
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 10mA
Idq2 = 10mA
Pout @ Peak
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 12.5 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0