PA679TB_15 Datasheet, PDF (9/12 Pages) Renesas Technology Corp – N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

(2) P-ch PART (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
TA - Ambient Temperature - °C
µ PA679TB
0.24
0.2
0.16
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on FR-4 board of
2500 mm² x 1.1 mm
2 units total
0.12
0.08
0.04
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-1
Pulsed
- 0.8
- 0.6
- 0.4
VGS = −4.5 V
−4.0 V
- 0.2
−2.5 V
0
0
- 0.4 - 0.8 - 1.2 - 1.6
-2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-10
VDS = −10.0 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = 125°C
75°C
25°C
−25°C
-0.0001
0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
- 1.6
- 1.4
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
VDS = −10.0 V
ID = −1.0 m A
- 1.2
-1
- 0.8
- 0.6
-50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = −10.0 V
Pulsed
TA = −25°C
1
25°C
75°C
125°C
0.1
0.01
- 0.001 - 0.01
- 0.1
-1
- 10
ID - Drain Current - A
Data Sheet G16615EJ1V0DS
7