PA679TB_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

1000
SWITCHING CHARACTERISTICS
VDD = 10.0 V
VGS = 4.0 V
RG = 10 Ω
100
td(off)
tf
tr
td(on)
10
0.01
0.1
1
10
ID - Drain Current - A
µ PA679TB
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
VGS = 0 V
P u ls e d
1
0.1
0.01
0.001
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
6
Data Sheet G16615EJ1V0DS