NP80N055MDG Datasheet, PDF (9/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N055MDG, NP80N055NDG, NP80N055PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
50
VDD = 44 V
10
28 V
40
11 V
8
30
6
VGS
20
4
10
0
0
VDS
20
40
2
ID = 80 A
0
60
80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tr
VDD = 28 V
tf
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100 10 V
4.5 V
10
VGS = 0 V
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D19796EJ1V0DS
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