NP80N055MDG Datasheet, PDF (8/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N055MDG, NP80N055NDG, NP80N055PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
10
8
VGS = 4.5 V
6
10 V
4
2
Pulsed
NP80N055MDG, NP80N055NDG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
ID = 40 A
Pulsed
16
12
8
4
NP80N055MDG, NP80N055NDG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
14
12
VGS = 4.5 V, ID = 35 A
10
8
10 V, 40 A
6
4
2
0
-75
Pulsed
NP80N055MDG, NP80N055NDG
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
12
10
8
VGS = 4.5 V
6
4
10 V
2
Pulsed
NP80N055PDG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
ID = 40 A
Pulsed
16
12
8
4
NP80N055PDG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
16
14
12
VGS = 4.5 V, ID = 35 A
10
8
10 V, 40 A
6
4
2
0
-75 -25 25
Pulsed
NP80N055PDG
75 125 175 225
Tch - Channel Temperature - °C
6
Data Sheet D19796EJ1V0DS