TBB1016 Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

TBB1016
S parameter
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
Mag
Deg
0.994
–3.7
0.992
–7.6
0.987
–11.1
0.985
–14.8
0.975
–18.6
0.967
–21.9
0.960
–25.4
0.952
–28.9
0.940
–32.2
0.934
–35.7
0.914
–38.8
0.904
–42.1
0.892
–45.4
0.881
–48.8
0.870
–51.5
0.855
–54.4
0.839
–57.5
0.827
–60.3
0.809
–62.8
0.796
–65.7
(V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V, R_G = 120 kΩ, Zo = 50 Ω)
S21
S12
S22
Mag
Deg
Mag
Deg
Mag
Deg
3.73
175.3
0.002
88.4
0.992
–2.4
3.72
170.7
0.003
107.7
0.996
–5.1
3.72
166.1
0.004
54.7
0.992
–7.2
3.70
161.7
0.004
62.4
0.990
–9.6
3.71
157.0
0.005
81.1
0.990
–12.0
3.69
152.9
0.005
83.3
0.984
–14.6
3.68
148.1
0.004
65.3
0.982
–17.1
3.65
143.8
0.006
68.8
0.982
–19.4
3.64
138.9
0.006
77.6
0.972
–21.9
3.62
134.7
0.006
69.3
0.971
–24.6
3.58
130.0
0.006
77.0
0.965
–26.9
3.58
125.9
0.006
45.7
0.959
–29.9
3.55
121.4
0.005
66.8
0.955
–32.5
3.52
116.9
0.004
52.5
0.948
–35.6
3.51
112.5
0.004
93.5
0.949
–38.3
3.49
107.9
0.004
92.7
0.941
–41.4
3.47
103.7
0.004
121.0
0.936
–44.4
3.48
99.3
0.004
140.2
0.929
–47.7
3.43
95.0
0.005
167.7
0.921
–50.9
3.43
90.3
0.007
171.4
0.921
–54.5
Rev.2.00 Aug 22, 2006 page 8 of 9