TBB1016 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

TBB1016
Twin Built in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
REJ03G1327-0200
Rev.2.00
Aug 22, 2006
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Very useful for total tuner cost reduction.
• Suitable for World Standard Tuner RF amplifier.
• High gain; PG = 32 dB at 200 MHz
• Low noise; NF = 1.0 dB at 200 MHz
• Power supply voltage: 5 V
Outline
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
Notes: 1. Marking is “RM”.
2. TBB1016 is indivisual type number of RENESAS TBBFET.
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DS
6
Gate1 to source voltage
V_G1S
+6
–0
Gate2 to source voltage
V_G2S
+6
–0
Drain current
I_D
30
Channel power dissipation
Pch^Note3
250
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 22, 2006 page 1 of 9