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TBB1010 Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
TBB1010
Gain Reduction vs.
Gate2 to Source Voltage
50
40
VDS = VG1 = 5 V
R G = 120 kΩ
30
20
10
0
0
1
2
3
4
Gate2 to Source Voltage V G2S (V)
Rev.2, Feb. 2003, page 8 of 10