TBB1010 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

TBB1010
Twin Build in Biasing Circuit MOS FET IC
VHF/VHF RF Amplifier
ADE-208-1607B (Z)
3rd. Edition
Feb. 2003
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• High |yfs|=29mS ×2
• Suitable for World Standard Tuner RF amplifier.
• Very useful for total tuner cost reduction.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
• Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
Notes:
4
5
6
3
2
1
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
1. Marking is “KM”.
2. TBB1010 is individual type number of HITACHI TWIN BBFET.