HAT3021R_16 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3021R
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
–2 A
I_D = –0.5 A, –1 A
300
V_GS = 4.5 V
200
–0.5 A, –1 A, –2 A
100 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = –100 A / µs
10
V_GS = 0, Ta = 25°C
–0.1 –0.3
–1
–3
–10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –50 V
–25 V
–20
–10 V
–4
–40
V_DS
–60
V_DD = –50 V
–25 V
–10 V
–8
V_GS
–12
–80
–100
0
–16
I_D = –2.6 A
–20
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
1
0.5
25°C
0.2
0.1
75°C
0.05
0.02
0.01
0
–0.03 –0.1 –0.3
Drain Current
V_DS = 10 V
Pulse Test
–1 –3 –10
I_D (A)
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
2000
1000
Ciss
500
200
100
Coss
50
20
Crss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
td(off)
tr
20
td(on)
10
tf
5
2
1
–0.1
V_GS = –10 V, V_DS = –30 V
Rg = 4.7 Ω, duty ≤ 1 %
–1
–10
Drain Current I_D (A)
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