HAT3021R_16 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3021R
Silicon N/P Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
78
DD
2
4
G
G
S1
Nch
56
DD
S3
Pch
8 ^{7 65}
1 ²³⁴
REJ03G0415-020
Rev.2.0
6HS0.20
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch
Pch
Drain to source voltage
V_DSS
80
–80
Gate to source voltage
V_GSS
±20
±20
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
3.4
20.4
–2.6
–15.6
Body-drain diode reverse drain current
I_DR
3.4
Channel dissipation
Pch ^Note2
1.5
–2.6
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.0, 6HS.0.20, page 1 of 10