HAF1008_15 Datasheet, PDF (8/13 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1008(L), HAF1008(S)
Body to Drain Diode Reverse
recovery Time
500
200
100
50
20
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
10
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
Reverse Drain Current I_DR (A)
Switching Characteristics
100
50
tr
20
tf
10
t _d(off)
5
t _d(on)
2
1
0.5
-0.1 -0.2
V_GS = -10 V, V_DD = -30 V
PW = 300 µs, duty < 1 %
-0.5 -1 -2 -5 -10 -20 -50
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
-20
Pulse Test
-16 _{VGS = -5 V}
-12
0V
-8
10000
Typical capacitance vs.
Drain to Source Voltage
1000
-4
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V_SD (V)
VGS = 0
f = 1 MHz
100
0 -10 -20 -30 -40 -50 -60
Drain to Source Voltage V_DS (V)
Rev.1.00, May.13.2003, page 6 of 11