HAF1008_15 Datasheet, PDF (4/13 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1008(L), HAF1008(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D (pulse) ^Note1
Body-drain diode reverse drain I_DR
current
Channel dissipation
Pch^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
–60
–16
2.5
–20
–40
–20
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol Min
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
–3.5
—
—
—
—
—
—
—
Vop
–3.5
Typ
Max
Unit
—
—
V
—
–1.2
V
—
–100 µA
—
–50
µA
—
–1
µA
–0.8
—
mA
–0.35 —
mA
175
—
°C
—
–12
V
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Channel temperature
Rev.1.00, May.13.2003, page 2 of 11