BCR16CS_15 Datasheet, PDF (8/14 Pages) Renesas Technology Corp – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
III QUADRANT
100
80
60
40
I QUADRANT
20
0
10¹ 2 3 5 7 10² 2 3 5 7 10³ 2 3 5 7 10⁴
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
7
5 ^TYPICAL
EXAMPLE
3 ^{Tj = 125°C}
2
IT = 4A
τ = 500µs
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
VD = 200V
10¹ _{f = 3Hz}
7
5
MINIMUM
3 CHARAC-
2 ^TERISTICS
VALUE
I QUADRANT
10⁰
III QUADRANT
7
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10³
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
IRGT III
2
10²
7
5
4
3
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V
A
V
RG
TEST PROCEDURE 3
Mar. 2002