BCR16CS_15 Datasheet, PDF (5/14 Pages) Renesas Technology Corp – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
Tc=25°C, ITM=25A, Instantaneous measurement
Gate trigger voltage ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate trigger current ^✽2
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case ^{✽3 ✽4}
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
✽5
Tj=125°C
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured on the T2 terminal.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
—
—
2.0
—
—
1.5
—
—
1.5
—
—
1.5
—
—
1.5
—
—
20
—
—
20
—
—
20
0.2
—
—
—
—
1.4
10
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Test conditions
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–8.0A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
10³
7
5
3
2
10²
7 Tj = 125°C
5
3
2
Tj = 25°C
10¹
7
5
3
2
10⁰
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002