RJK0214DPA Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

RJK0214DPA
• MOS2 and Schottky Barrier Diode
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
4.5 V
10 V
40
2.8 V
Pulse Test
2.7 V
30
2.6 V
20
2.5 V
10
V_GS = 2.4 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
Pulse Test
60
40
I_D = 20 A
20
10 A
5A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
R07DS0206EJ0110 Rev.1.10
Sep 02, 2011
Preliminary
Maximum Safe Operation Area
1000
100
10
1
ms
ms
100
10
μ_s
μ_s
10
Operation in
1 ^{this area is}
limited by R_DS(on)
Tc = 25 °C
0.1 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 5 V
Pulse Test
40
30
20
10
Tc = 75°C
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
10
Pulse Test
3 _{VGS = 4.5 V}
10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current I_D (A)
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