RJK0214DPA Datasheet, PDF(3/11 Page) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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RJK0214DPA Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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RJK0214DPA

Preliminary

â¢ MOS2

Item

Symbol Min

Drain to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

V(BR)DSS

IGSS

IDSS

VGS(off)

1.2

RDS(on)

|yfs|

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Gate Resistance

Total gate charge

Gate to source charge

Qgs

Gate to drain charge

Qgd

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Schottky Barrier diode forward voltage VF

Bodyâdrain diode reverse

trr

recovery time

Notes: 4. Pulse

Typ

1.6

2.1

100

5200

850

470

1.05

8.7

0.39

Max

Â±0.5

2.5

2.0

2.8

7280

2.2

Unit

ïA

mï

(Ta = 25Â°C)

Test Conditions

ID = 10 mA, VGS = 0

VGS = Â±20 V, VDS = 0

VDS = 25 V, VGS = 0

VDS = 10 V, I D =1 mA

ID =22.5 A, VGS = 10 V Note4

ID = 22.5 A, VGS = 4.5 V Note4

ID = 22.5 A, VDS = 5 V Note4

VDS = 10 V

VGS = 0

f = 1MHz

VDD = 10 V

VGS = 4.5 V

ID = 45 A

VGS = 10 V, ID = 22.5 A

VDD ï» 10 V

RL = 0.44 ï

Rg = 4.7 ï

IF = 2 A, VGS = 0 Note4

IF = 45 A, VGS = 0

diF/ dt = 100 A/ïs

R07DS0206EJ0110 Rev.1.10

Sep 02, 2011

Page 3 of 10

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