NX8349TS Datasheet, PDF (7/11 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8349TS,NX8349YK,NX8349XK
Chapter Title
ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +95°C, BOL, unless otherwise
specified)
Parameter
Symbol
Conditions
MIN.
Mean Optical Output Power
Peak Emission Wavelength
Spectral Width
Side Mode Suppression Ratio
Threshold Current
P_f
λ_p
Δλ
SMSR
I_th
CW, P_f = −3 dBm
CW, P_f = −3 dBm, 20 dB down
CW, P_f = −3 dBm
CW, T_C = 25°C
CW
1 290
35
2
Differential Efficiency
Temperature Dependence of
Differential Efficiency
Operation Voltage
Monitor Current
Monitor Dark Current
Rise Time
Fall Time
Monitor PD Terminal
Capacitance
η_d
CW, P_f = −3 dBm, T_C = 25°C
0.020
CW, P_f = −3 dBm
Δη_d
η_d
Δη_d = 10 log _{ηd (@ 25°C)}
0.012
−3.5
V_op CW, P_f = −3 dBm
0.5
I_m
CW, P_f = −3 dBm
70
I_D
V_R = 3.3 V, T_C = 25°C
V_R = 3.3 V
t_r
20-80%
*1
t_f
20-80%
*1
C_t
V_R = 3.3 V, f = 1 MHz
Relative Intensity Noise
RIN
*1
Tracking Error^*2
γ
−1.0
Notes: *1. 9.95/10.3/10.5 Gb/s, PRBS 2³¹âˆ’1, NRZ, Duty Cycle = 50%
*2. Tracking Error: γ
Pf
(mW)
TC = 25°C
Pf
γ = 10 log
[dB]
Pf @ 25°C
TYP
−3
8
0.033
6
MAX.
1 330
1
15
30
0.040
0.060
1.5
2.2
700
10
500
50
50
20
−128
1.0
Unit
dBm
nm
nm
dB
mA
W/A
dB
V
μA
nA
ps
ps
pF
dB/Hz
dB
Pf @ 25°C
Pf
TC = –5 to +95°C
0
Im
Im _(mA)
R08DS0002EJ0100 Rev.1.00
Jul 26, 2010
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