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| NX8349TS Datasheet, PDF (1/11 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |||
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Preliminary Data Sheet
NX8349TS,NX8349YK,NX8349XK
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
R08DS0002EJ0100
Rev.1.00
Jul 26, 2010
DESCRIPTION
The NX8349TS, NX8349YK, NX8349XK are 1 310 nm Multiple Quantum Wells (MQW) structured Distributed
Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle
type package designed for SFP+/XFP transceiver.
FEATURES
⢠Internal optical isolator
⢠Optical output power
⢠Low threshold current
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
Pf = â3 dBm
Ith = 8 mA TYP. @ TC = 25°C
TC = â5 to +95°C
APPLICATIONS
⢠10 G BASE-LW/LR
⢠10 G Fibre Channel
R08DS0002EJ0100 Rev.1.00
Jul 26, 2010
Page 1 of 9
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