NR8800FS-CB_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS

NR8800FS-CB
<R> TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
100
80
1 000
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
λ = 1 310 nm,
Ipo = 1.0 μA
100
+25°C
60
40
20
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength λ ( μm)
DARK CURRENT, PHOTO CURRENT
vs. REVERSE VOLTAGE
10^–3
λ = 1 310 nm,
Ipo = 1.0 μA
–20°C
10
TC = +85°C
1
0
20
40
60
80
100
Reverse Voltage VR (V)
DARK CURRENT vs. REVERSE VOLTAGE
10^–3
λ = 1 310 nm,
Ipo = 1.0 μA
10^–4
Iph
10^–5
10^–4
10^–5
–20°C
10^–6
10^–6
10^–7
10^–8
ID
10^–9
10^–7
TC = +85°C
10^–8
10^–9
+25°C
10^–10
0
20
40
60
80 100
Reverse Voltage VR (V)
10^–10
0
Remark The graphs indicate nominal characteristics.
Data Sheet PL10702EJ03V0DS
20
40
60
80 100
Reverse Voltage VR (V)
5