NR8800FS-CB_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS

NR8800FS-CB
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Multiplied Dark Current
Terminal Capacitance
Sensitivity
Multiplication Factor
Excess Noise Factor^*2
Optical Return Loss
Symbol
Conditions
VBR ID = 100 μA
δ^*1
ID
IDM
Ct
S
M
x
F
ORL
VR = VBR × 0.9
M = 2 to 10
VR = VBR × 0.9, f = 1 MHz
λ = 1 310 nm, M = 1
λ = 1 310 nm, Ipo = 1.0 μA,
VR = V (@ ID = 1 μA)
λ = 1 310 nm, Ipo = 1.0 μA,
M = 10, f = 35 MHz, B = 1 MHz
GI-62.5, λ = 1 310 nm
*1 δ =
VBR (25°C + ΔT°C) − VBR (25°C)
ΔT°C · VBR (25°C)
*2 F = M^X
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/°C
7
30
nA
1
5
nA
0.5
0.75
pF
0.8
0.94
A/W
30
70
0.7
5
28
dB
4
Data Sheet PL10702EJ03V0DS