NP88N075EUE_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
VDS = 10 V
100
TA = −55°C
25°C
75°C
175°C
10
1
0.1
2
3
4
5
6
7
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
0.1
0.01
0.01
TA = 175°C
75°C
25°C
−55°C
0.1
1
VDS = 10 V
Pulsed
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
VGS = 10 V
10
5
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
VGS = 10 V
200
100
0
0
Pulsed
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
20
Pulsed
15
10
ID = 44 A
5
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4
ID = 250 μA
3
2
1
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Data Sheet D14676EJ6V0DS
5