NP88N075EUE_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(oGnS) L=im10iteVd)}
ID(pulse)
ID(DC)
LimPoitweder
10 _ms
DC
Dissipation
1 _ms
PW
100 _μs ^{= 10} _μs
1
TC = 25°C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
500
450 mJ
400
300
IAS = 69 A
200
100
14 mJ
0
88 A
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
0.1
0.01
10 μ 100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
Rth(ch-C) = 0.52°C/W
Single Pulse
TC = 25°C
10
100 1000
4
Data Sheet D14676EJ6V0DS